Grain boundaries in high-Tcsuperconductors

Grain Boundaries in Polycrystalline Alumina

Transition between Low and High Angle Grain Boundaries

Institut für Metallkunde und Metallphysik, RWTH Aachen, 52056 Aachen, Germany Carnegie Mellon University, Pittsburgh PA 15213, USA Abstract The migration of planar, symmetric tilt grain boundaries with different tilt axes was investigated. The driving force for the grain boundary migration was due to an external mechanical stress field. Low as well as high angle grain boundaries can move under ...

Electrical Properties of Grain Boundaries

The electrical properties of grain boundaries are very different in insulators, semiconductors and metals. We present them briefly in the case of insulators and semiconductors and with more details in the case of metals.

Layering transitions at grain boundaries

We review various simplified models that have been advanced to describe layering (complexion) transitions at grain boundaries in multicomponent solids. In particular, we first outline lattice-gas, off-lattice atomistic and thermodynamic models that have been employed to investigate phase-like behavior at segregated grain boundaries. The results of these investigations are summarized in the form...

Grain boundaries in the Swift-Hohenberg equation

We study the existence of grain boundaries in the Swift-Hohenberg equation. The analysis relies on a spatial dynamics formulation of the existence problem and a centre-manifold reduction. In this setting, the grain boundaries are found as heteroclinic orbits of a reduced system of ODEs in normal form. We show persistence of the leading-order approximation using transversality induced by wavenum...